Dye sensitization of a large band gap semiconductor by an iron(III) complex
IR@CMERI: CSIR- Central Mechanical Engineering Research Institute (CMERI), Durgapur
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| Title |
Dye sensitization of a large band gap semiconductor by an iron(III) complex
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| Creator |
Chatterjee, Debabrata
Moulik, Swapan Kumar Lingamallu, Giribabu Kanaparthi, Ravi Kumar |
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| Subject |
Chemistry
Dye sensitised solar cell |
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| Description |
The Fe(III) complex, [FeIII(HQS)3] (HQS = 8 hydroxyquinoline-5-sulfonic acid), is found to effect sensitization of the large band gap semiconductor, TiO2. The role of interfacial electron transfer in sensitization of TiO2 nanoparticles by surface adsorbed [FeIII(HQS)3] was studied using femtosecond time scale transient absorption spectroscopy. Electron injection has been confirmed by direct detection of the electron in the conduction band. A TiO2-based dye-sensitized solar cell (DSSC) was fabricated using [FeIII(HQS)3] as a sensitizer, and the resulting DSSC exhibited an open-circuit voltage value of 425 mV. The value of the short-circuit photocurrent was found to be 2.5 mA/cm2. The solar to electric power conversion efficiency of the [FeIII(HQS)3] sensitized TiO2-based DSSC device was 0.75 %. The results are discussed in the context of sensitization of TiO2 by other Fe(II)-dye complexes.
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| Date |
2014
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| Type |
Article
PeerReviewed |
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| Identifier |
Chatterjee, Debabrata and Moulik, Swapan Kumar and Lingamallu, Giribabu and Kanaparthi, Ravi Kumar (2014) Dye sensitization of a large band gap semiconductor by an iron(III) complex. Transition Metal Chemistry, 39 (6). pp. 641-646.
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| Relation |
http://cmeri.csircentral.net/26/
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