Role of Sensing Parameters in Breast Cancer Detection using GaN HEMTs
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
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| Title |
Role of Sensing Parameters in Breast Cancer Detection using GaN HEMTs
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| Creator |
Mittal, S
Makwana, I Chaturvedi, N Chaturvedi, N |
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| Subject |
Optoelectronic Devices
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| Description |
AlGaN/GaN HEMT is a promising device for detection of breast cancer, which operates on the principle of specific binding of c-erbB-2 protein through bio-functionalized layers of Gold and Thioglycolic acid applied on the gate region. In this paper, a simulation based study of the effect of various sensing parameters on device sensitivity is performed using nextnano3 simulation tool. These parameters include interface charge densities, thioglycolic acid concentration and c-erbB-2 concentration. The simulated device exhibits high current sensitivity of the order of 100 μA/mm for 20 μg/ml change in c-erbB-2 concentration in saliva, under practical environmental conditions.
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| Date |
2013
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/19/1/29_2012%2816%29.pdf
Mittal, S and Makwana, I and Chaturvedi, N and Chaturvedi, N (2013) Role of Sensing Parameters in Breast Cancer Detection using GaN HEMTs. In: International Conference on Emerging Technologies: Micro to Nano (ETMN - 2013), February 23-24, 2013, KK Birla, Goa . (Submitted) |
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| Relation |
http://ceeri.csircentral.net/19/
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