Design of Compact, High Capacitance Ratio MEMS switch for X - Band Applications using High-k Dielectric Materials
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Design of Compact, High Capacitance Ratio MEMS switch for X - Band Applications using High-k Dielectric Materials
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| Creator |
Maninder, K
Rangra, KJ Sharma, A Kumar, D Singh, S |
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| Subject |
MEMS and Microsensors
Sensors and Nanotechnology |
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| Description |
The paper discusses the design aspects of capacitive RF
MEMS Symmetric Toggle Switch (STS) with particular
emphasis on device compactness, reliability, and
improvement in isolation & insertion loss by incorporating
hafnium dioxide (HfO2) as a dielectric material. The major
impact of the change from SiO2 to HfO2 having dielectric
constant of 20, is the reduction in overall dimensions of the
switch; capacitive overlap area is reduced by 75% leading
to overall reduction of about 50%. Significant improvement
in isolation (-43dB) and insertion loss (-0.014dB), at 11
GHz with 50 nm thick HfO2 as a dielectric layer compared
to -29 dB and -0.016 dB @ 11 GHz respectively for SiO2
makes hafnium dioxide an attractive dielectric for RF
micro-electro-mechanical systems (MEMS) switch for new
generation of low-loss high-linearity microwave circuits.
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| Date |
2010
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/83/1/02_2010.pdf
Maninder, K and Rangra, KJ and Sharma, A and Kumar, D and Singh, S (2010) Design of Compact, High Capacitance Ratio MEMS switch for X - Band Applications using High-k Dielectric Materials. In: Tech Connect World Conference & Expo 2010, June 21-25, 2010, Anaheim, California (U.S.A.). (Submitted) |
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| Relation |
http://ceeri.csircentral.net/83/
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