Low loss STS based SPDT for X – band Applications
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
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Title |
Low loss STS based SPDT for X – band Applications
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Creator |
Manindera, K
Sharma, A Kumar, D Singh, S Rangra, KJ |
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Subject |
Sensors and Nanotechnology
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Description |
An approach to optimize the electromechanical parameters of RF MEMS SPDT designed for operation at 10 GHz, using high
dielectric constant material (HfO2) is presented and the results are compared to those for silicon dioxide – the conventional
dielectric used for realizing capacitive shunt switches. The optimized length of CPW based transmission line (�/4), computed by
considering the permittivity of gold at microwave frequencies is approximately 2700 μm. The overall size of SPDT including the
CPW ground area, reduces from 12 mm2 for SiO2 dielectric layer based configuration to approximately 6 mm2 for HfO2 based
capacitive SPDT. The reduction in dimensions ensures lower hysteresis in switch on-off characteristics and better stress related
deformation control in electroplated metallic structures. The insertion loss, return loss and isolation are also better in the case of
SPDT with HfO2 compared to SiO2 based devices. SPDT having SiO2 dielectric layer shows insertion loss of 0.35 dB, return loss
of 26.4 dB and isolation of 45.1 dB at 10 GHz, whereas SPDT having HfO2 dielectric layer shows insertion loss of 0.08 dB,
return loss of 35.7 dB and isolation of 48.8 dB at 10 GHz. Comparison of single switch response with different dielectrics is also
presented.
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Date |
2010
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Type |
Conference or Workshop Item
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://ceeri.csircentral.net/97/1/06_2010.pdf
Manindera, K and Sharma, A and Kumar, D and Singh, S and Rangra, KJ (2010) Low loss STS based SPDT for X – band Applications. In: International Conference on Eurosensors (XXIV), September 5-8, 2010, Linz, Austria. (Submitted) |
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Relation |
http://ceeri.csircentral.net/97/
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