Simulation of InxGa1-xN based p-i-n Solar Cells
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Simulation of InxGa1-xN based p-i-n Solar Cells
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| Creator |
Mathew, M
Shukla, B Singh, K |
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| Subject |
Optoelectronic Devices
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| Description |
The InGaN alloy system offers a unique opportunity to develop high efficiency solar cells. In this study, p-i-n solar cells consisting of InxGa1..xN are successfully simulated, with Indium fraction varying from x = 0.07 to
0.25. The key properties of InxGa1-xN were simulated by employing PC-1D software, including I-V characteristic,
efficiency, band structure, built-in electric field, quantum efficiency etc. The results of the simulation were compared with the results of other fabricated solar cell published in the literature and analyzed the causes of the differences among these results. This work may help the progress in the preparation of the InGaN-based high efficiency solar cells.
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| Date |
2009
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/103/1/22-2009_%28i%29.pdf
Mathew, M and Shukla, B and Singh, K (2009) Simulation of InxGa1-xN based p-i-n Solar Cells. In: International Conference on Optics & photonics ( ICOP-2009), October 30 - November 1, 2009, CSIO, Chandigarh. (Submitted) |
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| Relation |
http://ceeri.csircentral.net/103/
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