ISFET Fabrication and Design of On-chip Readout Circuit using 0.35μm Digital CMOS Technology
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
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Title |
ISFET Fabrication and Design of On-chip Readout Circuit using 0.35μm Digital CMOS Technology
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Creator |
Prakash, MD
Santosh, M Khanna, VK |
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Subject |
MEMS and Microsensors
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Description |
Biomedical instruments are widely used in modern medical facilities. Among theseinstruments, pH measurement is a vital biomedical application. Biomedical sensors like ISFET
are used to detect the pH level. In the current work, a detailed explanation of the ISFET fabrication is discussed. The fabricated ISFET by the proposed method is characterized. After characterization, ID curve is plotted for different pH solutions. A macro-model of the fabricated
ISFET is prepared. This macro-model is used to design a readout and bias circuit. The bias circuit is used to provide constant current to ISFET, the current is controlled by a resistor. An opamp is used to source current. The output is taken through a differential amplifier. The output is almost rail to rail (3 V for 3.3 V supply). The op-amp used has a PSRR of 65 db and resistor used to control current is made process independent by parallel-series splitting of a poly-silicon resistor. The total circuit is simulated in cadence software using AMS (Austria Micro System) 0.35 μm technology having 3 metal layers and two poly-silicon layers.
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Date |
2009
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Type |
Conference or Workshop Item
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://ceeri.csircentral.net/138/1/43-2009.pdf
Prakash, MD and Santosh, M and Khanna, VK (2009) ISFET Fabrication and Design of On-chip Readout Circuit using 0.35μm Digital CMOS Technology. In: International Conference on Sensors & Related Networks (SENNET- 09), December 7-10, 2009, VIT, Vellore (TN). (Submitted) |
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Relation |
http://ceeri.csircentral.net/138/
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