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Fabrication and Characterization of Al gate n-MOSFET, On-chip Fabricated with Si3N4 ISFET

IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani

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Title Fabrication and Characterization of Al gate n-MOSFET, On-chip Fabricated with Si3N4 ISFET
 
Creator Chaudhary, R
Sharma, A
Sinha, S
Yadav, J
Sharma, R
Mukhiya, R
Khanna, VK
 
Subject MEMS and Microsensors
 
Description This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same chip as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer characteristics of on-chip fabricated MOSFET are obtained and measured in order to study the fabricated ISFET behavior to be used as pH sensor. Silicon nitride is preferred over silicon dioxide sensing film/dielectric (in case of MOSFET) which has better sensitivity and low drift. Process simulations were performed using Silvaco® TCAD tool.
 
Date 2015
 
Type Conference or Workshop Item
PeerReviewed
 
Format application/pdf
 
Identifier http://ceeri.csircentral.net/251/1/2_2015%284%29.pdf
Chaudhary, R and Sharma, A and Sinha, S and Yadav, J and Sharma, R and Mukhiya, R and Khanna, VK (2015) Fabrication and Characterization of Al gate n-MOSFET, On-chip Fabricated with Si3N4 ISFET. In: 4th International Symposium on VLSI Design & Test (VDAT 2015), June 26-27, 2015, Institute of Technology, Nirma University, Ahmedabad. (Submitted)
 
Relation http://ceeri.csircentral.net/251/