Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
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Title |
Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering
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Creator |
Sinha, S
Aditi, . Sinha, SK Mukhiya, R Sharma, R Khanna, VK |
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Subject |
MEMS and Microsensors
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Description |
Performance of potentiometric chemical/biological sensing platforms largely depends upon the sensing film used to detect the concentrations of ions in an electrolyte [1]. Ion-sensitive Field-Effect Transistor (ISFET) is a popular potentiometric sensor which is commonly used as a pH sensor. In ISFET, silicon dioxide can be used as a sensing film but it is prone to hydration and non-linear sensitivity over the wide pH range [2]. These limitations are addressed by using Aluminum Nitride (AlN) as the sensing film which is deposited using magnetron assisted pulsed DC reactive sputtering [3].
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Date |
2016
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Type |
Conference or Workshop Item
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://ceeri.csircentral.net/287/1/22-1-2016.pdf
Sinha, S and Aditi, . and Sinha, SK and Mukhiya, R and Sharma, R and Khanna, VK (2016) Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering. In: 3rd International Confernece of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2016), 11-15 December 2016, IISC Bangalore. (Submitted) |
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Relation |
http://ceeri.csircentral.net/287/
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