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Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering

IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani

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Title Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering
 
Creator Sinha, S
Aditi, .
Sinha, SK
Mukhiya, R
Sharma, R
Khanna, VK
 
Subject MEMS and Microsensors
 
Description Performance of potentiometric chemical/biological sensing platforms largely depends upon the sensing film used to detect the concentrations of ions in an electrolyte [1]. Ion-sensitive Field-Effect Transistor (ISFET) is a popular potentiometric sensor which is commonly used as a pH sensor. In ISFET, silicon dioxide can be used as a sensing film but it is prone to hydration and non-linear sensitivity over the wide pH range [2]. These limitations are addressed by using Aluminum Nitride (AlN) as the sensing film which is deposited using magnetron assisted pulsed DC reactive sputtering [3].
 
Date 2016
 
Type Conference or Workshop Item
PeerReviewed
 
Format application/pdf
 
Identifier http://ceeri.csircentral.net/287/1/22-1-2016.pdf
Sinha, S and Aditi, . and Sinha, SK and Mukhiya, R and Sharma, R and Khanna, VK (2016) Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering. In: 3rd International Confernece of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2016), 11-15 December 2016, IISC Bangalore. (Submitted)
 
Relation http://ceeri.csircentral.net/287/