Ion-Sensitive Field-Effect Transistor as a pH sensor
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Ion-Sensitive Field-Effect Transistor as a pH sensor
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| Creator |
Sinha, S
Mukhiya, R Sharma, R Khanna, VK |
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| Subject |
MEMS and Microsensors
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| Description |
The paper presents process design and fabrication of an ion-sensitive field-effect transistor (ISFET). The fabricated ISFET structure is an N-channel, depletion-mode device. The standard self-aligned process is adopted and silicon dioxide was used as the sensing film for pH sensing application. The sensitivity of SiO2-ISFET is found to be ~ 33 mV/pH.
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| Date |
2017
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/296/1/30-2016.pdf
Sinha, S and Mukhiya, R and Sharma, R and Khanna, VK (2017) Ion-Sensitive Field-Effect Transistor as a pH sensor. In: National Conference on Desalination and Water Purification for Defence and Civil Applications, 22-23 March 2017, Jodhpur. (Submitted) |
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| Relation |
http://ceeri.csircentral.net/296/
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