Unipolar resistive switching behavior in sol-gel synthesized FeSrTiO3 thin films
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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Title |
Unipolar resistive switching behavior in sol-gel synthesized FeSrTiO3 thin films
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Creator |
Thakre, Atul
Kaswan, Jyoti Shukla, A. K. Kumar, Ashok |
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Subject |
Chemistry
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Description |
A robust unipolar resistive switching (URS) was successfully observed in sol-gel derived perovskite type Fedoped strontium titanate (FeSTO) thin films, deposited on an ITO-coated glass substrate by a spin-coating technique. The surface topography of the films was characterized by atomic force microscopy that suggested a smooth surface with an average surface roughness nearly 1-2 nm. The crystal structure, URS phenomena, current-voltage characteristics, and dielectric and impedance behavior were analyzed for both high resistance state (HRS) and low resistance state (LRS). The X-ray photoelectron spectroscopy (XPS) was also employed to investigate the valence states of the host and dopants elements. The Au/FeSTO/ITO device offers a large resistance ratio of HRS and LRS (R-off/R-on) around 10(5), long stable retention characteristics for 10(4) s, and a distinguished and large non-overlapping voltage window of similar to 4 to 6 V for SET and RESET operations.
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Publisher |
Royal Society of Chemistry
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Date |
2017
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Type |
Article
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://npl.csircentral.net/2925/1/Unipolar%20resistive%20switching.pdf
Thakre, Atul and Kaswan, Jyoti and Shukla, A. K. and Kumar, Ashok (2017) Unipolar resistive switching behavior in sol-gel synthesized FeSrTiO3 thin films. RSC Advances , 7. pp. 54111-54116. ISSN 2046-2069 |
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Relation |
http://npl.csircentral.net/2925/
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