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Unipolar resistive switching in sol-gel synthesized strontium titanate thin films

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Unipolar resistive switching in sol-gel synthesized strontium titanate thin films
 
Creator Thakre, Atul
Kumar, Ashok
 
Subject Materials Science
Applied Physics/Condensed Matter
 
Description We report repeatable and robust unipolar resistive switching (URS) in strontium titanate (SrTiO3 similar to STO) thin films fabricated on conducting ITO coated glass substrate. The Atomic Force Microscopy (AFM) image of the top surface of the films suggests very smooth surface over a large area. The conduction mechanisms responsible for the resistive switching phenomenon were also thoroughly analyzed by current-voltage and impedance spectroscopy analysis. Frequency-dependent various impedance parameters were analyzed for each resistive states (high resistance state (HRS) and low resistive state (LRS)). The oxygen vacancies may be one of the dominating factors for robust URS phenomenon in the device. The presented Au/STO/ITO memory devices have exhibited long retention characteristics of >10(4) s and OFF/ON resistance ratio of >10(3) with a distinguishable SET and RESET voltage window of similar to 1 V.
 
Publisher Elsevier
 
Date 2018-05
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/4014/1/Unipolar%20resistive%20switching%20in%20sol-gel%20synthesized.pdf
Thakre, Atul and Kumar, Ashok (2018) Unipolar resistive switching in sol-gel synthesized strontium titanate thin films. Vacuum, 151. pp. 182-184. ISSN 0042-207X
 
Relation http://npl.csircentral.net/4014/