Effect of parasitic capacitance on ‘OFF/ON’ ratio of RF MEMS capacitive switch
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Effect of parasitic capacitance on ‘OFF/ON’ ratio of RF MEMS capacitive switch
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| Creator |
Bansal, D
, K , A Kumar, A Rangra, K |
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| Subject |
MEMS and Microsensors
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| Description |
Abstract— Figure of merit for the RF MEMS capacitive switch is decided by ‘ OI°F/ON’ capacitance ratio. There is number of methods reported in the litera- ture to increase the ‘OFF/ON’ i-atio of the switch. Floating metal concept is one among them. "theoretical ratio based on parallel plate calculations is claimed up to 2000. However parasitics capacitance plays a major role in ‘ON’ state ca- pacitance and measured ' OFF/ON’ ratio is less than 100. In present paper, LCR parameters for RF MEMS capacitive switch are extracted considering parasit- ics. Parasitics are independent from switch capacitance/overlap area. ’these are function of switch geometry and substrate material on which switch is fabricat- ed.
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| Date |
2019-12-02
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/341/1/31-2018.pdf
Bansal, D and , K and , A and Kumar, A and Rangra, K (2019) Effect of parasitic capacitance on ‘OFF/ON’ ratio of RF MEMS capacitive switch. In: International Workshop on Physics of Semiconductor Devices(IWPSD) 2017, December 11-15, 2017, New Delhi. (Submitted) |
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| Relation |
http://ceeri.csircentral.net/341/
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