Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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Title |
Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory
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Creator |
Deswal, Sweety
Malode, Rupali R. Kumar, Ashok Kumar, Ajeet |
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Subject |
Chemistry
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Description |
A detailed understanding of quantization conductance (QC), the correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC state to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well-defined multiple QC states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.
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Publisher |
Royal Society of Chemistry
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Date |
2019
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Type |
Article
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://npl.csircentral.net/4134/1/Controlled%20inter.pdf
Deswal, Sweety and Malode, Rupali R. and Kumar, Ashok and Kumar, Ajeet (2019) Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory. RSC Advances , 9 (17). pp. 9494-9499. ISSN 2046-2069 |
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Relation |
http://npl.csircentral.net/4134/
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