Characterization of Titanium Nitride Film for High Power Applications
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
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Title |
Characterization of Titanium Nitride Film for High Power Applications
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Creator |
Kumar, P
Bansal, D Anuroop, Mr Mehta, K Kumar, A Meena, GS Rangra, K Boolchandani, D |
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Subject |
MEMS and Microsensors
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Description |
In this paper, Titanium Nitride (TiN) thin film is deposited at room temperature and optimized for high power RF MEMS applications. Being hard, Titanium Nitride is used at contact area. The contact material should have low resistance and high hardness. TiN thin films were deposited by DC Magnetron reactive sputtering using a four inch high purity titanium target in nitrogen (N2) environment. X-ray diffraction (XRD) analysis is used for verification of TiN film. The effect of various N2 pressure on resistivity and hardness of deposited TiN thin film was investigated. Resistivity of the film decreases with N2 percentage and hardness increases with N2 pressure.
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Date |
2019
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Type |
Conference or Workshop Item
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://ceeri.csircentral.net/608/1/39-2018.pdf
Kumar, P and Bansal, D and Anuroop, Mr and Mehta, K and Kumar, A and Meena, GS and Rangra, K and Boolchandani, D (2019) Characterization of Titanium Nitride Film for High Power Applications. In: One Day Workshop on Recent Trends in Transducers and Actuators (RTTA-2019), January 21, 2019, CSIR-CEERI, Pilani, India. |
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Relation |
http://ceeri.csircentral.net/608/
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