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Characterization of Titanium Nitride Film for High Power Applications

IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani

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Title Characterization of Titanium Nitride Film for High Power Applications
 
Creator Kumar, P
Bansal, D
Anuroop, Mr
Mehta, K
Kumar, A
Meena, GS
Rangra, K
Boolchandani, D
 
Subject MEMS and Microsensors
 
Description In this paper, Titanium Nitride (TiN) thin film is deposited at room temperature and optimized for high power RF MEMS applications. Being hard, Titanium Nitride is used at contact area. The contact material should have low resistance and high hardness. TiN thin films were deposited by DC Magnetron reactive sputtering using a four inch high purity titanium target in nitrogen (N2) environment. X-ray diffraction (XRD) analysis is used for verification of TiN film. The effect of various N2 pressure on resistivity and hardness of deposited TiN thin film was investigated. Resistivity of the film decreases with N2 percentage and hardness increases with N2 pressure.
 
Date 2019
 
Type Conference or Workshop Item
PeerReviewed
 
Format application/pdf
 
Identifier http://ceeri.csircentral.net/608/1/39-2018.pdf
Kumar, P and Bansal, D and Anuroop, Mr and Mehta, K and Kumar, A and Meena, GS and Rangra, K and Boolchandani, D (2019) Characterization of Titanium Nitride Film for High Power Applications. In: One Day Workshop on Recent Trends in Transducers and Actuators (RTTA-2019), January 21, 2019, CSIR-CEERI, Pilani, India.
 
Relation http://ceeri.csircentral.net/608/