Dielectric Charging Alleviation in RF MEMS Capacitive Switch
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Dielectric Charging Alleviation in RF MEMS Capacitive Switch
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| Creator |
Khushbu, Ms
Bansal, D Anuroop , Mr Rangra, K |
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| Subject |
MEMS and Microsensors
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| Description |
RF MEMS switches have tremendous applications in defence and commercial area due to low loss, low power consumption and better RF response. However, the reliability concern of RF MEMS switches has limited its widespread use in cell phones, base stations, etc. The presence of dielectric charging in RF MEMS capacitive switch causes stiction and drift in the pull-in voltage. A design to alleviate charging has been proposed. Fabricated switch has pull-in voltage of <20V and pull-up voltage of 17V with a switching time of 78us.The switch has completed 600 million cycles. The resonant frequency of the device is 8.4 kHz. Insertion loss and isolation of the switch are better than 0.1 and 17 dB respectively.
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| Date |
2019
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/610/1/41-2018.pdf
Khushbu, Ms and Bansal, D and Anuroop , Mr and Rangra, K (2019) Dielectric Charging Alleviation in RF MEMS Capacitive Switch. In: One Day Workshop on Recent Trends in Transducers and Actuators (RTTA-2019), January 21, 2019, CSIR-CEERI, Pilani, India. |
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| Relation |
http://ceeri.csircentral.net/610/
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