Importance of pulse reversal effect of CdSe thin films for optoelectronic devices
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Importance of pulse reversal effect of CdSe thin films for
optoelectronic devices
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| Creator |
Saaminathan, V.
Murali, K.R. |
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| Subject |
Functional Materials
Electrochemical Materials Science |
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| Description |
Systematic studies of cadmium selenide thin films were prepared by without and with pulse reversal plating technique.
In the present work, preparation of CdSe thin films was reported with lower duty cycle and pulse reversal effect. Due to
these effects electrical and opto-electronic property of the material were changed. The thin film of CdSe was deposited
on cleaned conducting substrates like titanium, SnO2, nickel and stainless steel, respectively. The pulse plated CdSe
films without and with pulse reversal films were heat treated and characterized by XRD, optical studies, scanning
electron microscopy and photo electrochemical properties. Semiconductor parameters were estimated for without and
with pulse plating technique. The barrier height Fb was calculated for CdSe deposited on different conducting
substrates.
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| Publisher |
Elsevier
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| Date |
2005
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/89/1/045-2008.pdf
Saaminathan, V. and Murali, K.R. (2005) Importance of pulse reversal effect of CdSe thin films for optoelectronic devices. Journal of Crystal Growth, 279 (3). pp. 229-240. |
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| Relation |
http://cecri.csircentral.net/89/
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