Preparation and characterization of PZT thin films
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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| Title |
Preparation and characterization of PZT thin films
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| Creator |
Bose, A
Sreemany , Monjoy Halder, S K Bhattacharyya, D K Sen, Suchitra |
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| Subject |
Electronics
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| Description |
In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< mu m in thickness) for low voltage operation at <= 10V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80 - 150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Coming glass 1737 using a seed layer of TiOx (TiOx thickness ranging between 30 nm to 500 nm).
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| Publisher |
AMER INST PHYSICS
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| Date |
2008
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Identifier |
Bose, A and Sreemany , Monjoy and Halder, S K and Bhattacharyya, D K and Sen, Suchitra (2008) Preparation and characterization of PZT thin films. In: SMART DEVICES: MODELING OF MATERIAL SYSTEMS.
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| Relation |
http://cgcri.csircentral.net/225/
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