An efficient and flat-gain erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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| Title |
An efficient and flat-gain erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm
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| Creator |
Harun, S W
Paul, Mukul Chandra Pal, Mrinmay Dhar, A Sen, Ranjan Das, Shyamal Bhadra, Shyamal Kumar Shahabuddin, N S Ahmad, H |
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| Subject |
Electronics
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| Description |
A flat gain erbium-doped fiber amplifier (EDFA) operating in the 1550 nm to 1590 nm region is demonstrated. The EDFA uses only a15m EDF as opposed to a standard L-band EDFA which requires significantly longer EDF lengths. The EDF is fabricated using a Modified Chemical Vapor Deposition process in conjunction with a solution doping technique. The NA, cut-off wavelength and erbium ion concentration of the fiber are obtained at 0.15, 998 nm and 900 ppm respectively. The gain of the EDFA is flattened to a level of about 12 dB with a gain variation of less than 3 dB over a range from 1550 to 1590 nm with a 1480nm pump at 90mW. This amplifier operates on the energy transfer of the quasi-two-level system, whereby the C-band energy acts as a pump for the population inversion required for gain at the longer wavelength. The noise figure at the flat gain region varies from 6 to 8.5 dB.
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| Publisher |
National Institute of Optoelectronics
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| Date |
2008-08
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cgcri.csircentral.net/357/1/Opt_Adv_Mater_2_(2008)_455_%2D_458.pdf
Harun, S W and Paul, Mukul Chandra and Pal, Mrinmay and Dhar, A and Sen, Ranjan and Das, Shyamal and Bhadra, Shyamal Kumar and Shahabuddin, N S and Ahmad, H (2008) An efficient and flat-gain erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm. Optoelectronics and Advanced Materials-Rapid Ccommunications, 2 (8). pp. 455-458. ISSN 1842-6573 |
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| Relation |
http://cgcri.csircentral.net/357/
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