Ion beam-induced luminescence and photoluminescence of 100 MeV Si8+ ion irradiated kyanite single crystals
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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Title |
Ion beam-induced luminescence and photoluminescence of 100 MeV Si8+ ion irradiated kyanite single crystals
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Creator |
Nagabhushana, H.
Prashantha, S. C. Nagabhushana, B. M. Lakshminarasappa, B. N. Singh, Fouran Chakradhar, R P S |
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Subject |
Processing Science
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Description |
lonoluminescence (IL) of kyanite single crystals during 100 MeV Si8+ ion irradiation has been studied in the fluence range 1.87-7.50 x 10(11) ions/cm(2). Photoluminescence (PL) of similar dimensional crystals was recorded with same ions and energy in the fluence range 1 x 10(11) -5 x 10(13) ions/cm(2) with an excitation of 442 non He-Cd laser beam. A sharp IL and broad PL peaks at similar to 689 and 706 run were recorded. This is attributed to luminescence centers activated by Fe2+ and Fe3+ ions. It is observed that up to a given fluence, the IL and PL peak intensities increase with increase of Si8+ ion fluence. The stability of the chemical species was Studied on with and without irradiated samples by means of FT-IR spectroscopy. The results confirm that the O-Si-H type bonds covering on the surface of the sample. This layer might be acting as a protective layer and there by reducing the number of non-radiative recombination centers. (c) 2008 Elsevier Ltd. All rights reserved.
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Publisher |
PERGAMON-ELSEVIER SCIENCE LTD
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Date |
2008-09
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Type |
Article
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://cgcri.csircentral.net/386/1/Solid_State_Commun_147_%282008%29_377%E2%80%93380.pdf
Nagabhushana, H. and Prashantha, S. C. and Nagabhushana, B. M. and Lakshminarasappa, B. N. and Singh, Fouran and Chakradhar, R P S (2008) Ion beam-induced luminescence and photoluminescence of 100 MeV Si8+ ion irradiated kyanite single crystals. SOLID STATE COMMUNICATIONS, 147 (9-10). pp. 377-380. ISSN 0038-1098 |
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Relation |
http://cgcri.csircentral.net/386/
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