A potential low-temperature oxide-ion conductor: La2-xBaxMo2O9
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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Title |
A potential low-temperature oxide-ion conductor: La2-xBaxMo2O9
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Creator |
Basu, S
Sujatha Devi, P Maiti, Himadri Sekhar |
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Subject |
Electronics
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Description |
An oxide ion conducting material, La1.94Ba0.06Mo2O9, with ionic conductivity of the order of 0.084 S/cm at 800 degreesC in air was prepared by a citrate-nitrate auto-ignition process. A 3% Ba doping has suppressed the resistive transition of unsubstituted La2Mo2O9, which in turn stabilized the high-temperature cubic phase at room temperature as confirmed from x-ray diffraction, differential thermal analysis, and dilatometric studies. Impedance measurements on sintered La1.94Ba0.06Mo2O9 further lend strong support that a small amount of Ba doping has increased the overall conductivity of the parent compound La2Mo2O9 to a notable extent both at low and high temperatures. (C) 2004 American Institute of Physics.
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Publisher |
American Institute of Physics
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Date |
2004-10-18
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Type |
Article
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://cgcri.csircentral.net/452/1/Appl_Phys_Lett_85_(2004)_3486%2D3488.pdf
Basu, S and Sujatha Devi, P and Maiti, Himadri Sekhar (2004) A potential low-temperature oxide-ion conductor: La2-xBaxMo2O9. Applied Physics Letters, 85 (16). pp. 3486-3488. ISSN 0003-6951 |
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Relation |
http://cgcri.csircentral.net/452/
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