CSIR Central

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

IR@NPL: CSIR-National Physical Laboratory, New Delhi


Field	Value

Title	Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

Creator	Chung, S. J. Kumar, M. Senthil Lee, Y. S. Suh, E-K An, M. H.

Subject	Physics

Description	Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Publisher	IOP PUBLISHING

Date	2010-04-21

Type	Article PeerReviewed

Format	application/pdf

Identifier	http://npl.csircentral.net/36/1/28.pdf Chung, S. J. and Kumar, M. Senthil and Lee, Y. S. and Suh, E-K and An, M. H. (2010) Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition. Journal of Applied Physics D: Applied Physics, 43 (185101). pp. 1-4. ISSN 1361-6463

Relation	http://iopscience.iop.org/0022-3727/43/18/185101 http://npl.csircentral.net/36/