Electrically Tunable Optical Switching of a Mott Insulator– Band Insulator Interface
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Electrically Tunable Optical Switching of a Mott Insulator–
Band Insulator Interface
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| Creator |
Rastogi, A.
Kushwaha, A. K. Shiyani, T. Gangawar, A. Budhani, R. C. |
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| Subject |
Chemistry
Materials Science Physics |
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| Description |
We report on the optical switching behavior of ultrathin LaTiO 3 (LTO) fi lms epitaxially grown on (100) and (110) SrTiO 3 (STO).The metallic state of this heterostructure formed by deposition of an otherwise Mott insulator can be switched by an electric fi eld applied in a fi eld-effect transistor (FET) confi guration or upon exposure to near-ultraviolet light. The photon-fl ux-induced switching can be enhanced or nullifi ed by changing the polarity of the gate voltage. We present a scenario where electrons from the lower Hubbard band of LTO and oxygen defect states of STO accumulate at the interface. The extent of this accumulation is modifi ed by electric and photon fi elds, giving rise to a potentially new electronic device.
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| Publisher |
Wiley-VCH Verlag Berlin
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| Date |
2010-10-25
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/117/1/91.pdf
Rastogi, A. and Kushwaha, A. K. and Shiyani, T. and Gangawar, A. and Budhani, R. C. (2010) Electrically Tunable Optical Switching of a Mott Insulator– Band Insulator Interface. Advanced Materials, 22 (40). pp. 4448-4451. ISSN 1521-4095 |
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| Relation |
http://onlinelibrary.wiley.com/doi/10.1002/adma.201001980/full
http://npl.csircentral.net/117/ |
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