Growth and characterization of GaSe single crystal
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Growth and characterization of GaSe single crystal
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| Creator |
M. M. , Abdullah
G. , Bhagavannarayana M. A. , Wahab |
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| Subject |
Crystallography
Materials Science Physics |
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| Description |
A systematic study on structural and morphological properties of gallium selenide (GaSe) single crystals grown by vertical Bridgman technique is reported. A hexagonal structure of GaSe with lattice parameters a=b=3.74909 Å and c=15.90698 Å has been confirmed with the help of powder X-ray diffraction (XRD). Respective values of strain (3.43×10−4 lin−2 m−4) and dislocation density (1.35×1014 lin m−2) have been calculated using powder X-ray diffraction results. High resolution X-ray diffraction (HRXRD) has been performed to ascertain the crystalline perfection of the grown single crystal. The scanning electron microscopy (SEM) and powder X-ray diffraction results are in good agreement as far as the grain size of the grown gallium selenide (GaSe) crystal is concerned.
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| Publisher |
Elsevier
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| Date |
2010-01-13
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/176/1/146.pdf
M. M. , Abdullah and G. , Bhagavannarayana and M. A. , Wahab (2010) Growth and characterization of GaSe single crystal. Journal of Crystal Growth, 312 (9). pp. 1534-1537. ISSN 0022-0248 |
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| Relation |
http://dx.doi.org/10.1016/j.jcrysgro.2010.01.022
http://npl.csircentral.net/176/ |
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