Growth of (100) directed ADP crystal with slotted ampoule
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Growth of (100) directed ADP crystal with slotted ampoule
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| Creator |
P. , Rajesh
P. , Ramasamy G. , Bhagavannarayana Kumar, Binay |
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| Subject |
Materials Science
Physics |
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| Description |
Good quality ammonium dihydrogen phosphate single crystals have been grown by: (i) Sankaranarayanan–Ramasamy (SR) method and (ii) SR method with slotted ampoule. The grown crystals were subjected to UV–Vis spectroscopy, high-resolution X-ray diffractometer, dielectric, piezoelectric and laser damage threshold studies. Compared to the (100) plane of the conventional method grown ADP crystal and (100) directed SR method grown ADP crystal, the crystal grown by SR method with slotted ampoule has higher growth rate, higher optical transparency, high crystalline perfection, low dielectric loss, high piezoelectric charge coefficient and high laser damage threshold due to diffusion of segregated impurities away from the growing crystal in the slotted ampoule growth.
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| Publisher |
Elsevier
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| Date |
2010-02-16
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/180/1/150.pdf
P. , Rajesh and P. , Ramasamy and G. , Bhagavannarayana and Kumar, Binay (2010) Growth of (100) directed ADP crystal with slotted ampoule. Current Applied Physics , 10 (4). pp. 1221-1226. ISSN 1567-1739 |
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| Relation |
http://dx.doi.org/10.1016/j.cap.2010.02.047
http://npl.csircentral.net/180/ |
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