Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals
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| Creator |
Kumar, A.
Prakash, J. Khan, Mohd Taukeer Dhawan, S. K. Biradar, A. M. |
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| Subject |
Physics
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| Description |
A pronounced memory effect has been observed in cadmium telluride quantum dots (CdTe-QDs) doped ferroelectric liquid crystals (FLCs) by using dielectric and electro-optical methods. The memory effect has been attributed to the charge storage on the CdTe-QDs upon the application of dc bias across the sample cell. The FLC molecules remain in the switched state in vicinity of the charge stored on QDs even after removal of bias. It has been observed that the memory effect depends on doping concentrations of CdTe-QDs and the FLC material used.
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| Publisher |
American Institute of Physics
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| Date |
2010-09-05
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/236/1/201.pdf
Kumar, A. and Prakash, J. and Khan, Mohd Taukeer and Dhawan, S. K. and Biradar, A. M. (2010) Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals. Applied Physics Letters, 97 (16). 163113-1 -163113-3 . ISSN 1077-3118 |
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| Relation |
http://dx.doi.org/10.1063/1.3495780
http://npl.csircentral.net/236/ |
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