Near UV emission and p-type conductivity in Zn1−xLixO and Zn1−xNaxO nanomaterial system
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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Title |
Near UV emission and p-type conductivity in Zn1−xLixO and Zn1−xNaxO nanomaterial system
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Creator |
Chawla, Santa
K. , Jayanthi Khan, Zahid H. Shah, Jyoti Kotnala, R. K. |
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Subject |
Materials Science
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Description |
The nanomaterial system Zn1−xLixO and Zn1−xNaxO (0<x<0.15) were synthesized by controlled solid state reaction. XRD analysis showed well formed wurtzite structure of average particle size about 50 nm and change in lattice parameters due to incorporation of group I element in ZnO lattice. SEM exhibited formation of nanorods. Hall effect measurement of Zn1−xLixO and Zn1−xNaxO system showed p-type conductivity which varied with concentration of Li and Na. Photoluminescence showed strong emission peak in near UV at 3.11 eV (398 nm) and negligible visible emission. The PL peak positions in Zn1−xLixO and Zn1−xNaxO nearly coincide which suggest very similar recombination mechanism in Li and Na doped ZnO nanocrystals. The results hold potential for fabrication of ZnO based near UV LEDs.
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Publisher |
Elsevier
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Date |
2009-05-30
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Type |
Article
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://npl.csircentral.net/258/1/223.pdf
Chawla, Santa and K. , Jayanthi and Khan, Zahid H. and Shah, Jyoti and Kotnala, R. K. (2009) Near UV emission and p-type conductivity in Zn1−xLixO and Zn1−xNaxO nanomaterial system. Materials & Design , 31 (4). pp. 1666-1670. ISSN 0261-3069 |
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Relation |
http://dx.doi.org/10.1016/j.matdes.2009.05.048
http://npl.csircentral.net/258/ |
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