A model for the J-V characteristics of P3HT:PCBM solar cells
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
A model for the J-V characteristics of P3HT:PCBM solar cells
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| Creator |
Kumar, Pankaj
Jain, S. C. Kumar, Vikram Chand, Suresh Tandon, R. P. |
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| Subject |
Physics
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| Description |
Current-voltage (J-V) characteristics of an organic bulk heterojunction solar cell have been modeled and compared with the measured characteristics of solar cell based on the blend of poly(3-hexylethiophene) (P3HT) and phenyl [6,6] C61 butyric acid methyl ester (PCBM). In an undoped organic double Schottky junction diode, for V<Vbi the electric field remains constant and is given by (Vbi−V)/d, where Vbi is the built-in voltage, V is the applied voltage, and d is sample thickness. We considered the effect of this constant electric field on the charge carrier transport and solved the drift and diffusion equations to model the J-V characteristics. For V<Vbi the current is found to be dominated by diffusion. A comparison of the theoretical results with the experimental data measured in dark and under different illumination intensities shows good agreement.
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| Publisher |
American Institute of Physics
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| Date |
2009-04-07
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/566/1/170.pdf
Kumar, Pankaj and Jain, S. C. and Kumar, Vikram and Chand, Suresh and Tandon, R. P. (2009) A model for the J-V characteristics of P3HT:PCBM solar cells. Journal of Applied Physics, 105 (10). pp. 104507-1. ISSN 1089-7550 |
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| Relation |
http://dx.doi.org/10.1063/1.3129320
http://npl.csircentral.net/566/ |
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