Raman imaging on high-quality graphene grown by hot-filament chemical vapor deposition
IR@NAL: CSIR-National Aerospace Laboratories, Bangalore
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Title |
Raman imaging on high-quality graphene grown by hot-filament chemical vapor deposition
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Creator |
Kataria, S
Patsha, Avinash Dhara, S Tyagi, AK Barshilia, Harish C |
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Subject |
Chemistry and Materials (General)
Physics(General) |
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Description |
We report the synthesis of high-quality graphene on Cu foils using hot-filament chemical vapor deposition technique and demonstrate that by suitably varying the CH4 and H2 flow rates, one can also obtain hydrogenated graphene. Micro-Raman spectroscopy studies confirm the growth of monolayer graphene as inferred from the intensity ratio of 2D to G peak which is nearly four in unhydrogenated samples. Detailed Raman area mapping confirms the uniform coverage of monolayer graphene. The grown layer is also transferred onto a Si substrate over ~10�10mm sq. area. The present results provide a leap in synthesis technology of high-quality graphene and pave way for scaling up the process.
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Publisher |
John Wiley & Sons, Ltd.
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Date |
2012
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Type |
Journal Article
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://nal-ir.nal.res.in/11509/1/Raman%2Dspectroscopy.pdf
Kataria, S and Patsha, Avinash and Dhara, S and Tyagi, AK and Barshilia, Harish C (2012) Raman imaging on high-quality graphene grown by hot-filament chemical vapor deposition. Journal of Raman Spectroscopy, 43 . pp. 1864-1867. ISSN 1097-4555 |
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Relation |
http://dx.doi.org/10.1002/jrs.4113
http://nal-ir.nal.res.in/11509/ |
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