Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique
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| Creator |
Panwar, O. S.
Rupesinghe, Nalin Amaratunga, G. A. J. |
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| Subject |
Engineering
Physics |
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| Description |
This article reports the field emission measurements on as grown tetrahedral amorphous carbon (ta-C) and nitrogen incorporated tetrahedral amorphous carbon (ta-C: N) filmsgrown using a pulsed filtered cathodic vacuum arc technique. The effect of varying thickness on field emission in the as grown ta-C films and the effect of varying nitrogen content in ta-C: N films have also been studied. The values of threshold field of emission (Eturnon) increase with decrease of thickness in the as grown ta-C films. Nitrogen incorporation up to 5.2at.% in ta-C films decreases the value of Eturnon from 9.9to5.1V/μm and thereafter it starts increasing again. To understand the mechanism of electron emission, a realistic energy band diagram of ta-C:N/n++Si heterojunction has been proposed from the experimentally measured valence and conduction band offsets, using in situ x-ray photoelectron spectroscopy and optical spectroscopy data already published in DRM 9 (2000) 1148. The data are explained using the Fowler and Nordheim theory. The field emission results obtained reveal that there exists a barrier to emission and the main barrier is at the front surface and this is related to the conduction band offset of the ta-C:N/n++Si heterojunction.
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| Publisher |
American Institute of Physics
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| Date |
2008-03
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/1030/1/96.pdf
Panwar, O. S. and Rupesinghe, Nalin and Amaratunga, G. A. J. (2008) Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique. Journal of Vacuum Science and Technology B , 26 (2). 566-575 . ISSN 1520-8567 |
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| Relation |
http://dx.doi.org/10.1116/1.2884762
http://npl.csircentral.net/1030/ |
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