Variation of TC and transport-properties with carrier concentration in Y-doped and Pb-doped Bi-based superconductors
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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| Title |
Variation of TC and transport-properties with carrier concentration in Y-doped and Pb-doped Bi-based superconductors
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| Creator |
Mandal, P
Poddar, A Ghosh, B Choudhury, Pranab |
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| Subject |
Electronics
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| Description |
Electrical resistivity, magnetic susceptibility, and the Hall voltage of Bi2Sr2Ca(1-x)Y(x)Cu2O8+y (Bi 2:2:1:2) and (Bi(1-x)Pb(x))Sr2Ca2Cu3O10+y (Bi 2:2:2:3) samples are measured as a function of temperature. A metal-insulator transition originating from the change of carrier concentration is found in the Bi 2:2:1:2 system at x congruent-to 0.55. Analysis of the electrical resistivity in the insulating region suggests that the transport is governed by a variable-range-hopping mechanism in the low-temperature region and phonon-assisted hopping of polarons in the high-temperature region. A universal dome-shaped T(c) versus n(H) variation is observed in the Bi 2:2:1:2 and Bi 2:2:2:3 systems, which is similar to that reported in La(2-x)Sr(x)CuO4 and YBa2Cu3O7-x systems. Various normal-state parameters, such as the effective mass of the carrier, Fermi energy, density of states at the Fermi level, and correlation energy, are calculated and compared to those reported in the literature.
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| Publisher |
American Physical Society
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| Date |
1991-06
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cgcri.csircentral.net/2727/1/pranab.pdf
Mandal, P and Poddar, A and Ghosh, B and Choudhury, Pranab (1991) Variation of TC and transport-properties with carrier concentration in Y-doped and Pb-doped Bi-based superconductors. Physical Review B, 43 (16, A). pp. 13102-13111. ISSN 1098-0121 |
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| Relation |
http://cgcri.csircentral.net/2727/
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