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Pressure enhanced superconductivity at 10K in La doped EuBiS2F

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Pressure enhanced superconductivity at 10K in La doped EuBiS2F
 
Creator Thakur, Gohil S.
Jha, Rajveer
Haque, Zeba
Awana, V. P. S.
Gupta, L. C.
Ganguli, A. K.
 
Subject Applied Physics/Condensed Matter
 
Description We have investigated the effect of La doping and high pressure on superconducting properties of EuBiS2F, which is a newly discovered superconducting material (T-c similar to 0.3 K) (Zhai et al (2014) Phys. Rev. B 90 064518). An enhancement of T-c to 2.2 K is observed in Eu0.5La0.5BiS2F. Upon application of pressure T-c is further enhanced up to similar to 10 K (P = 2.5 GPa). Eu0.5La0.5BiS2F is semiconducting down to 3 K. The onset of a superconductivity-like feature is seen at 2.2 K at ambient pressure. At a pressure above 1.38 GPa, the T-c(onset) remains invariant at 10 K but the T-c(rho = 0) is increased to above 8.2 K. There is a possible crystallographic transformation by application of pressure from a structure of low T-c to a structure corresponding to high T-c.
 
Publisher IOP Publishing
 
Date 2015-11
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/1953/1/260.pdf
Thakur, Gohil S. and Jha, Rajveer and Haque, Zeba and Awana, V. P. S. and Gupta, L. C. and Ganguli, A. K. (2015) Pressure enhanced superconductivity at 10K in La doped EuBiS2F. Superconductor Science and Technology, 28 (11). 115010-1 -115010-5. ISSN 0953-2048
 
Relation http://npl.csircentral.net/1953/