Temperature Dependent Electrical Properties of PZT Wafer
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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| Title |
Temperature Dependent Electrical Properties of PZT Wafer
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| Creator |
Basu, T
Sen, S Seal, A Sen, A |
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| Subject |
Engineering Materials
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| Description |
The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d (33)) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k (p)) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only similar to 3% in case of PZT bulk and similar to 7% for PZT wafer.
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| Publisher |
Minerals, Metals, and Materials Society
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| Date |
2016-04
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cgcri.csircentral.net/3679/1/seal.pdf
Basu, T and Sen, S and Seal, A and Sen, A (2016) Temperature Dependent Electrical Properties of PZT Wafer. Journal of Electronic Materials, 45 (4). pp. 2252-2257. ISSN 0361-5235 |
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| Relation |
http://cgcri.csircentral.net/3679/
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