Transport and stability studies on high band gap a-Si : H films prepared by argon dilution
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Transport and stability studies on high band gap a-Si : H films prepared by argon dilution
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| Creator |
Gogoi, Purabi
Dixit , P. N. Agarwal, Pratima |
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| Subject |
Physics
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| Description |
Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4-5 angstrom/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.
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| Date |
2008-02
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2098/1/283.pdf
Gogoi, Purabi and Dixit , P. N. and Agarwal, Pratima (2008) Transport and stability studies on high band gap a-Si : H films prepared by argon dilution. In: International Workshop on the Physics of Mesoscopic and Disordered Materials (MESODIS 2006) , DEC 04-08, 2006 , Indian Institute of Technology, Kanpur, INDIA . |
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| Relation |
http://npl.csircentral.net/2098/
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