Reactive Ion Etching of n-GaN using Cl2/BCl3 for LED Applications
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Reactive Ion Etching of n-GaN using Cl2/BCl3 for LED Applications
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| Creator |
Mathew, M
Singh, K Joshi, BC Sharma, AK Dhanavantri, C |
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| Subject |
Optoelectronic Devices
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| Description |
Reactive ion etching (RIE) of n-GaN using Cl2/BCl3 plasma under a high self-bias voltage was carried out. The effects of BCl3 flow rate with respect to Cl2 on the etch rate were investigated. An etch rate as high as 50nm/min for n-GaN was obtained under an RF power of 75 W, BCl3 flow rate of 4 sccm, Cl2 flow rate of 20 sccm and a pressure of 5 Pa. The root-mean-square (rms) roughness of the etched surface was between 0.32 and 0.46 nm as determined by atomic force microscopy.
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| Date |
2009
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/107/1/22-2009_%28ii%29.pdf
Mathew, M and Singh, K and Joshi, BC and Sharma, AK and Dhanavantri, C (2009) Reactive Ion Etching of n-GaN using Cl2/BCl3 for LED Applications. In: International Conference on Optics & Photonics (ICOP-2009), October 30 - November 1, 2009, CSIO, Chandigarh. (Submitted) |
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| Relation |
http://ceeri.csircentral.net/107/
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