Fabrication of 980 nm High Power Broad Area Laser Diodes
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
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| Title |
Fabrication of 980 nm High Power Broad Area Laser Diodes
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| Creator |
Singh, K
Mathew, M Singh, M Pradhan, N Sharma, A Kumar, P Chauhan, A Gupta, AK Pathak, BC Johri, S |
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| Subject |
Optoelectronic Devices
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| Description |
In this paper, we have reported the design and fabrication of InGaAs/AlGaAs/GaAs strained layer double quantum well 980 nm broad area laser diodes. The 100 µm wide stripe uncoated laser diode chip with 1000 µm cavity length demonstrated 870 mW CW output power at 1.8A at 250C. The output power was thermally limited due to epi-side mounted. The slope efficiency was ~ 0.7 W/A.
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| Date |
2009
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/109/1/22-2009_%28iii%29.pdf
Singh, K and Mathew, M and Singh, M and Pradhan, N and Sharma, A and Kumar, P and Chauhan, A and Gupta, AK and Pathak, BC and Johri, S (2009) Fabrication of 980 nm High Power Broad Area Laser Diodes. In: International Conference on Optics & Photonics ( ICOP-2009) , October 30 - November 1, 2009, CSIO, Chandigarh. (Submitted) |
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| Relation |
http://ceeri.csircentral.net/109/
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