Design and Simulation of Single Electron Inverter for Room Temperature Operation
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Design and Simulation of Single Electron Inverter for Room Temperature Operation
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| Creator |
Gupta, AK
Agarwal, PB Kumar, A |
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| Subject |
IC Design
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| Description |
In this paper, single electron inverter,for room temperature (300 K) operation has been designed and simulated in SIMON 2.0 software. The designed single electron inverter consists of two single electron transistors (SETs) connected in series, sharing common gate voltage. The calculated value of dot capacitance for room temperature operation is 7.750 × 10-20 F. The gate capacitance (CG) is chosen half of this value i. e. 3.875 × 10-20 F for logic operation, while the source (CTS) and drain (CTD) tunnel junction capacitances are taken of equal value 1.936 × 10-20 F. The supply voltages VDD and VSS have been calculated from tunnel and gate capacitances and found to be +1.375 and -1.375 V respectively. The input voltage +0.4 V and -0.4 V are taken for high and low logic and are applied at common terminal of both the gates. The corresponding output voltages, measured at load capacitance are -0.658 V and +0.658 V respectively. In addition to room temperature, the truth table of inverter logic operation at 100K and 200K temperatures is also verified.
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| Date |
2010
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/142/1/58_2009%28ii%29.pdf
Gupta, AK and Agarwal, PB and Kumar, A (2010) Design and Simulation of Single Electron Inverter for Room Temperature Operation. In: International Conference on Nanoscience & Technology (ICONSAT-2010), February 17-20, 2010, IIT, Bombay, Mumbai. (Submitted) |
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| Relation |
http://ceeri.csircentral.net/142/
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