Dielectric relaxation and <i>ac</i> conductivity of double perovskite Ho<sub>2</sub>ZnTiO<sub>6</sub>
IR@NISCAIR: CSIR-NISCAIR, New Delhi - ONLINE PERIODICALS REPOSITORY (NOPR)
View Archive Info| Field | Value | |
| Title |
Dielectric relaxation and <i>ac</i> conductivity of double perovskite Ho<sub>2</sub>ZnTiO<sub>6</sub>
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| Creator |
Mahato, Dev K
Dutta, Alo Sinha, T P |
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| Subject |
Dielectric properties
Double perovskite Impedance spectroscopy |
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| Description |
613-618
A new double perovskite holmium zinc titanate Ho<sub>2</sub>ZnTiO<sub>6</sub> (HZT) synthesized by solid state reaction method under sintering temperature 1250°C has been investigated by alternating impedance spectroscopy. The X-ray diffraction analysis shows that the compound crystallizes in monoclinic phase at room temperature. A relaxation is observed in the entire temperature range as a gradual decrease in <img src='/image/spc_char/italic_e.gif' border=0><img src='http://www.niscair.res.in/jinfo/right_quote.gif' border=0>(w) and broad peak in <img src='/image/spc_char/italic_e.gif' border=0><img src='http://www.niscair.res.in/jinfo/right_quote.gif' border=0><img src='http://www.niscair.res.in/jinfo/right_quote.gif' border=0>(w) in the frequency dependent real and imaginary parts of dielectric constant, respectively. The frequency dependent electrical data are analysed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The frequency dependence of the <img src='/image/spc_char/italic_e.gif' border=0><img src='http://www.niscair.res.in/jinfo/right_quote.gif' border=0><img src='http://www.niscair.res.in/jinfo/right_quote.gif' border=0> peak and <i style="">M</i><img src='http://www.niscair.res.in/jinfo/right_quote.gif' border=0><img src='http://www.niscair.res.in/jinfo/right_quote.gif' border=0> peak are found to obey an Arrhenius law with activation energy of 0.65 and 0.63 eV, respectively. Such a value of activation energy suggests the conduction in HZT which is due to polaron hopping based on the electron carriers. The scaling behaviour of imaginary part of electric modulus <i style="">M</i><img src='/image/spc_char/right_quote.gif' border=0><img src='/image/spc_char/right_quote.gif' border=0>suggests that the relaxation describes the same mechanism at various temperatures in HZT. |
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| Date |
2011-08-19T11:36:38Z
2011-08-19T11:36:38Z 2011-09 |
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| Type |
Article
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| Identifier |
0975-1041 (Online); 0019-5596 (Print)
http://hdl.handle.net/123456789/12591 |
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| Language |
en_US
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| Rights |
<img src='http://nopr.niscair.res.in/image/cc-license-sml.png'> <a href='http://creativecommons.org/licenses/by-nc-nd/2.5/in' target='_blank'>CC Attribution-Noncommercial-No Derivative Works 2.5 India</a>
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| Publisher |
NISCAIR-CSIR, India
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| Source |
IJPAP Vol.49(09) [September 2011]
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