Conduction and switching mechanism in Nb2O5 thin films based resistive switches
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Conduction and switching mechanism in Nb2O5 thin films based resistive switches
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| Creator |
Deswal, Sweety
Jain, Ashish Borkar, Hitesh Kumar, Ashok Kumar, Ajeet |
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| Subject |
Physics
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| Description |
We report unipolar resistive switching of Pt/Nb2O5/Al device with orthorhombic crystalline phase prepared by reactive sputtering method. It showed non-volatile reproducible unipolar switching with ON/OFF resistance ratio of 10(3) or higher. The range of SET and RESET voltage was 1.0-2.0V and 0.3-0.8V, respectively, depending on devices and their dimension. The charge carriers followed Ohmic and space-charge-limited conduction (SCLC) behaviour in low-resistance state (LRS) and high-resistance state (HRS), respectively. An impedance spectroscopy analysis as well as a drift and diffusion of oxygen ion vacancy model are presented to explain the conducting filament formation and its rupture during the SET and RESET processes.
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| Publisher |
European Physical Society
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| Date |
2016-10
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2165/1/Conduction%20and%20switching.pdf
Deswal, Sweety and Jain, Ashish and Borkar, Hitesh and Kumar, Ashok and Kumar, Ajeet (2016) Conduction and switching mechanism in Nb2O5 thin films based resistive switches. EPL, 116 (1). 17003-1-17003-5. ISSN 0295-5075 |
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| Relation |
http://npl.csircentral.net/2165/
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