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Effect of insertion of low leakage polar layer on leakage current and multiferroic properties of BiFeO3/BaTiO3 multilayer structure

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Effect of insertion of low leakage polar layer on leakage current and multiferroic properties of BiFeO3/BaTiO3 multilayer structure
 
Creator Sharma, Savita
Tomar, Monika
Kumar, Ashok
Puri, Nitin K.
Gupta, Vinay
 
Subject Chemistry
 
Description Polycrystalline BiFeO3 is a well established leaky room temperature multiferroic material. The present work focuses on the realization of high end functionalities such as polarization, low leakage current and high magnetization in a sandwich structure of BaTiO3 and BiFeO3. Interestingly, it was found that the BaTiO3 barrier layer effectively reduces the leakage current which in turn significantly improves the ferroelectric and ferromagnetic properties. The increase in the number of BaTiO3 barrier layers stops the charge carriers for long range mobility. X-ray diffraction (XRD) analysis suggests that an increase in the number of BaTiO3 layers significantly increases the stress modulus in the both the constituent layers along c-axis and tetragonality in the BiFeO3 films which helps in improving the multiferroic properties in multilayered structure. The saturation polarization (P-s) and magnetization (M-s) significantly increased from 18 to 99 mu C cm(-2) and 28 to 95 emu cm(-3) respectively with increase in number of barrier layers from 2 to 6. The BiFeO3/BaTiO3 multilayered structure with enhanced multiferroic properties finds potential application in the tunable devices.
 
Publisher Royal Society of Chemistry
 
Date 2016
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/2193/1/Effect%20of%20insertion%20of%20low%20leakage.pdf
Sharma, Savita and Tomar, Monika and Kumar, Ashok and Puri, Nitin K. and Gupta, Vinay (2016) Effect of insertion of low leakage polar layer on leakage current and multiferroic properties of BiFeO3/BaTiO3 multilayer structure. RSC Advances, 6 (64). 59150-59154. ISSN 2046-2069
 
Relation http://npl.csircentral.net/2193/