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Electronic structure of rare-earth doped SrFBiS2 superconductors from photoemission spectroscopic studies

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Electronic structure of rare-earth doped SrFBiS2 superconductors from photoemission spectroscopic studies
 
Creator Mishra, P.
Lohani, H.
Jha, Rajveer
Awana, V. P. S.
Sekhar, B. R.
 
Subject Applied Physics/Condensed Matter
 
Description The electronic structure study of the Rare Earth (La, Ce) doped SrFBiS2 superconductors using valence band photoemission in conjugation with the band structure calculations have been presented. The spectral features shift towards higher binding energy, consistent with the electron doping, for the doped compounds. An enhanced metallicity in addition to the shift in the Fermi level towards the conduction band occurs for the Rare Earth (RE) doped compounds. Further, the degeneracy of bands along X-M direction at valence band maximum (VBM) and conduction band minimum (CBM) is lifted due to RE doping. An enhanced spectral weight near E-F accompanied by a decrease in density of states at higher binding energy occurs for the doped compounds. This unusual spectral weight shift is substantiated by the change in Fermi surface topology and reduced distortion of Bi-S plane for the doped compounds.
 
Publisher Elsevier
 
Date 2016-06
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/2202/1/Electronic%20structure%20of%20rare.pdf
Mishra, P. and Lohani, H. and Jha, Rajveer and Awana, V. P. S. and Sekhar, B. R. (2016) Electronic structure of rare-earth doped SrFBiS2 superconductors from photoemission spectroscopic studies. Physica C: Superconductivity and its Applications, 525. 89-93 . ISSN 0921-4534
 
Relation http://npl.csircentral.net/2202/