Low voltage organic permeable base N-type transistor
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Low voltage organic permeable base N-type transistor
|
|
| Creator |
Agrawal, Kalpana
Rana, Omwati Singh, Nidhi Srivastava, Ritu Rajput, S. S. |
|
| Subject |
Applied Physics/Condensed Matter
|
|
| Description |
A vertical n-type organic permeable metal base transistor was fabricated using N, N-ditridecylperylene-3,4,9,10-tetracarboxylic diimide as an active material for making emitter and collector regions. A composite of Al//C-60/Al/AlOx forms the base region of the proposed structure. The detailed study of the Early effect was carried out for determining the intrinsic gain, transconductance, and output impedance which were found to be 92, 145 mu Omega(-1), and 0.634 M Omega, respectively, at an applied bias of 1 V between collector-emitter contacts. The device is capable of operating at a low voltage of 1 V, which makes it suitable for low voltage and high frequency applications.
|
|
| Publisher |
AIP Publishing
|
|
| Date |
2016-10-17
|
|
| Type |
Article
PeerReviewed |
|
| Format |
application/pdf
|
|
| Identifier |
http://npl.csircentral.net/2269/1/Low%20voltage%20organic%20permeable.pdf
Agrawal, Kalpana and Rana, Omwati and Singh, Nidhi and Srivastava, Ritu and Rajput, S. S. (2016) Low voltage organic permeable base N-type transistor. Applied Physics Letters, 109 (16). ISSN 0003-6951 |
|
| Relation |
http://npl.csircentral.net/2269/
|
|