Temperature dependence of I-V characteristics and performance parameters of silicon solar cell
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Temperature dependence of I-V characteristics and performance parameters of silicon solar cell
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| Creator |
Singh, Priyanka
Singh, S. N. Lal, M. Husain, M. |
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| Subject |
Energy Fuels
Materials Science Applied Physics/Condensed Matter |
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| Description |
The temperature dependence of open-circuit voltage (V-oc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295-320 K. The rate of decrease of V-oc with temperature (T) is controlled by the values of the band gap energy (E-g), shunt resistance (R-sh) and their rates of change with T We have found that R-sh decreases nearly linearly with T and its affect on dV(oc)/dT is significant for cells having smaller R-sh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of R-s and other parameters but also on the rate of change of R-s with voltage. The rate of decrease of R-s with voltage and Tare important to estimate the value of CF and its decrease with temperature accurately.
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| Publisher |
Elsevier
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| Date |
2008-08
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2291/1/272.pdf
Singh, Priyanka and Singh, S. N. and Lal, M. and Husain, M. (2008) Temperature dependence of I-V characteristics and performance parameters of silicon solar cell. Solar Energy Materials & Solar Cells, 92 (12). 1611-1616 . ISSN 0927-0248 |
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| Relation |
http://npl.csircentral.net/2291/
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