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Substrate bias induced synthesis of flowered-like bunched carbon nanotube directly on bulk nickel

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Substrate bias induced synthesis of flowered-like bunched carbon nanotube directly on bulk nickel
 
Creator Bisht, Atul
Chockalingam, S.
Panwar, O. S.
Kesarwani, A. K.
Singh, B. P.
Singh, V. N.
 
Subject Materials Science
 
Description This paper reports the effect of substrate bias on the multiwalled carbon nanotube (MWCNT) deposited on nickel foil by microwave plasma enhanced chemical vapor deposition technique. The MWCNTs have been characterized by the scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, field emission and current-voltage characteristic of the heterojunction diode. The SEM images exhibit unique hierarchical flowered-like bunched and conformally coated MWCNTs. Substrate bias induced ion bombardment helps in the enhancement of hydrocarbon dissociation and is responsible for flowered-like MWCNTs growth. The HRTEM micrographs show the base growth mechanism for MWCNTs. The value of turn on field for emission decreases from 5.5 to 1.9 V/mu m and field enhancement factor increases from 927 to 4770, respectively, with the increase of substrate bias. The diode ideality factor of CNT/n-Si heterojunction is evaluated as 2.4 and the on/off current ratio is found to be 7 at +/- 2V, respectively.
 
Publisher Elsevier
 
Date 2016-02
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/2380/1/Substrate%20bias%20induced.pdf
Bisht, Atul and Chockalingam, S. and Panwar, O. S. and Kesarwani, A. K. and Singh, B. P. and Singh, V. N. (2016) Substrate bias induced synthesis of flowered-like bunched carbon nanotube directly on bulk nickel. Materials Research Bulletin, 74. 156 -163 . ISSN 0025-5408
 
Relation http://npl.csircentral.net/2380/