The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE
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| Creator |
Prakash, Nisha
Anand, Kritika Barvat, Arun Pal, Prabir Singh, Dilip K. Jewariya, Mukesh Ragam, Srinivasa Adhikari, Sonachand Maurya, Kamlesh K. Khanna, Suraj P. |
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| Subject |
Materials Science
Optics |
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| Description |
In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-probe spectroscopy measurements have been carried out to characterize the samples. The effect of RF-plasma power towards unintentional doping and giving rise to yellow luminescence (YL) is discussed. Our PC measurements show relatively faster decay for sample grown with higher RF-plasma power. In addition, the ultrafast optical pump-probe spectroscopy results show the presence of various defect levels with different relaxation times. A faster ultrafast relaxation time from the conduction band to the closest defect level and conduction band to the next defect level was observed for the sample grown with higher plasma power A comparatively low defect density and faster carrier relaxation observed in higher RF-plasma power grown samples is caused by lower impurities and gallium vacancies. The results imply that RF-plasma power is very important parameter for the growth of epitaxial GaN films and undesirable impurities and gallium vacancies might get incorporated in the epitaxial GaN films.
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| Publisher |
Elsevier
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| Date |
2016-04
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2394/1/The%20impact%20of%20RF%20plasma.pdf
Prakash, Nisha and Anand, Kritika and Barvat, Arun and Pal, Prabir and Singh, Dilip K. and Jewariya, Mukesh and Ragam, Srinivasa and Adhikari, Sonachand and Maurya, Kamlesh K. and Khanna, Suraj P. (2016) The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE. Optical Materials, 54. 26-31 . ISSN 0925-3467 |
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| Relation |
http://npl.csircentral.net/2394/
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