Tunable field effect properties in solid state and flexible graphene electronics on composite high - low k dielectric
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Tunable field effect properties in solid state and flexible graphene electronics on composite high - low k dielectric
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| Creator |
Kumar, Arunandan
Tyagi, Priyanka Dagar, Janardan Srivastava, Ritu |
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| Subject |
Physical Chemistry
Materials Science |
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| Description |
We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm(2)/V at V-D = -5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexible FEDs with only 5% and 12% variation in mobility for 300 and 750 bending are obtained.
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| Publisher |
Elsevier
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| Date |
2016-04
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2400/1/Tunable%20field.pdf
Kumar, Arunandan and Tyagi, Priyanka and Dagar, Janardan and Srivastava, Ritu (2016) Tunable field effect properties in solid state and flexible graphene electronics on composite high - low k dielectric. Carbon, 99. 579-584 . ISSN 0008-6223 |
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| Relation |
http://npl.csircentral.net/2400/
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