Effect of Ni doping on thick film SnO2 gas sensor
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Effect of Ni doping on thick film SnO2 gas sensor
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| Creator |
Jain, K.
Pant, R. P. Lakshmikumar, S. T. |
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| Subject |
Analytical Chemistry
Electrochemistry Instruments/ Instrumentation |
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| Description |
Ni- and/or Al-doped and undoped SnO2 thick film gas sensors were prepared using screen printing technique and tested for their LPG gas sensitivity. Tin oxide powder was prepared using a chemical precipitation technique. The sensitivity, optimum working temperature and response time were investigated in relation to dopants as well as preparation route. The results show that the gas sensitivity is affected not only by the additive but the way it is added into the sensor material. The results indicated a reduction in grain size on Al and Ni doping. The results on resistance, response and recovery time were explained in terms of n-p junction formation between SnO2 and NiO, which increases the depletion barrier height.
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| Publisher |
Elsevier
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| Date |
2006-02-27
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2462/1/49.pdf
Jain, K. and Pant, R. P. and Lakshmikumar, S. T. (2006) Effect of Ni doping on thick film SnO2 gas sensor. Sensors and Actuators B: Chemical, 113 (2). pp. 823-829. ISSN 0925-4005 |
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| Relation |
http://npl.csircentral.net/2462/
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