Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film
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| Creator |
Kumar, Pawan
Kumar, Aravind Dixit, P. N. Sharma, T. P. |
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| Subject |
Physics
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| Description |
The II-VI group semiconductors are of great importance due to their applications in various opto-electronic devices. Among these semiconductors, zinc sulphide film is the most suitable for its utility in opto-electronic devices. ZnS film has been prepared on glass substrates by using vacuum evaporation method. The optical properties, especially refractive index by transmission spectra of these films have been studied in the wavelength range 400-850 nm using Manifaciers envelope method. The ZnS film has a direct band gap of 3.50 eV. The wurtzite structure of ZnS film has been confirmed by X-ray diffraction analysis. The electrical properties of ZnS especially dark conductivity and photoconductivity at different temperatures have also been studied.
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| Publisher |
NISCAIR
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| Date |
2006-09
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2523/1/114.pdf
Kumar, Pawan and Kumar, Aravind and Dixit, P. N. and Sharma, T. P. (2006) Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film. Indian Journal of Pure and Applied Physics, 44 (9). pp. 690-693. ISSN 0019-5596 |
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| Relation |
http://npl.csircentral.net/2523/
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