Thickness-independent memory effect in ferroelectric liquid crystals
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Thickness-independent memory effect in ferroelectric liquid crystals
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| Creator |
Kaur, S.
Thakur, A. K. Bawa, S. S. Biradar, A. M. |
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| Subject |
Applied Physics/Condensed Matter
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| Description |
Memory in ferroelectric liquid crystals (FLCs) is well known in the literature where thickness of the cell is less than the pitch value of the material. Here, we report a thickness independent memory in a class of FLCs called the de Vries electroclinic liquid crystals. Thickness independency of memory effect is observed by dielectric spectroscopy and texture observation. The memory observed in Sm C-* phase of de Vries material is entirely different from conventional FLCs. In the former case, it is the inherent property of the material but in the latter it is dependent on the cell geometry. In de Vries material, it is probably the randomization that is playing a major role.
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| Publisher |
American Institute of Physics
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| Date |
2006-03-20
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2573/1/167.pdf
Kaur, S. and Thakur, A. K. and Bawa, S. S. and Biradar, A. M. (2006) Thickness-independent memory effect in ferroelectric liquid crystals. Applied Physics Letters, 88 (12). 122905-1-122905-3. ISSN 0003-6951 |
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| Relation |
http://npl.csircentral.net/2573/
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