Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films
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| Creator |
Panigrahi, Jagannath
-, Vandana Singh, Rajbir Rauthan, C. M. S. Singh, P. K. |
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| Subject |
Materials Science
Applied Physics/Condensed Matter Nanoscience/ Nanotechnology |
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| Description |
The evidence of good quality silicon surface passivation using thermal ALD deposited Al doped zinc oxide (AZO) thin films is demonstrated. AZO films are prepared by introducing aluminium precursor in between zinc and oxygen precursors during the deposition. The formation of AZO is confirmed by ellip-sometry, XRD and Hall measurements. Effective minority carrier lifetime (tau(eff)) greater than 1.5ms at intermediate bulk injection levels is realized for symmetrically passivated p-type silicon surfaces under optimised annealing conditions of temperature and time in hydrogen ambient. The best results are realised at 450 degrees C annealing for > 15min. Such a layer may lead to implied open circuit voltage gain of 80mV.
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| Publisher |
American Institute of Physics
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| Date |
2017-03
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2649/1/Crystalline%20silicon%20surface%20passivation%20by%20thermal%20ALD%20deposited%20Al%20doped%20ZnO%20thin%20films.pdf
Panigrahi, Jagannath and -, Vandana and Singh, Rajbir and Rauthan, C. M. S. and Singh, P. K. (2017) Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films. AIP Advances, 7 (3). 035219-1-035219-7. ISSN 2158-3226 |
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| Relation |
http://npl.csircentral.net/2649/
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