Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process
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| Creator |
Thakre, Atul
Kumar, Ashok |
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| Subject |
Materials Science
Applied Physics/Condensed Matter Nanoscience/ Nanotechnology |
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| Description |
An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (similar to 2 V) and moderate retention characteristics of 10(4) s along with a high R-off/R-on resistance ratio similar to 10(3) was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.
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| Publisher |
American Institute of Physics
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| Date |
2017-12
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2696/1/Enhanced%20bipolar%20resistive%20switching%20.pdf
Thakre, Atul and Kumar, Ashok (2017) Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process. AIP Advances, 7 (12). 125115-1-125115-9. ISSN 2158-3226 |
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| Relation |
http://npl.csircentral.net/2696/
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